PART |
Description |
Maker |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
NTP22N06 |
N?Channel Enhancement?Mode Silicon Gate
|
ON Semiconductor
|
MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MTM8N20 MTM15N45 |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
|
IRF820 IRF823 IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC Motorola, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
SV401 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
MTP12N06EZL |
OBSOLETE - N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
SM703 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
SR703 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LK702 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LX521 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|